GE Aerospace and Wolfspeed have signed an agreement to accelerate the adoption of high-voltage silicon carbide technologies for aerospace, defence and industrial applications.
CINCINNATI, USA – GE Aerospace and Wolfspeed have entered into a Memorandum of Understanding (MOU) aimed at accelerating the commercial adoption of high-voltage silicon carbide (SiC) technologies for industrial, aerospace and defence markets. The collaboration will focus on developing standards for high-voltage SiC-based power modules and strengthening supply chain resilience for future high-power applications.
Focus on high-voltage power systems
Under the agreement, Wolfspeed will supply its 10 kV silicon carbide MOSFET die while the two companies work together to determine standardised high-voltage power module formats for commercial deployment. The collaboration is intended to support applications including solid-state transformers, industrial electrification systems, and next-generation aerospace and defence platforms.
According to the companies, higher-voltage power modules can reduce the number of series-connected devices required within electrical systems, resulting in solutions that are more compact, efficient and reliable.
Supporting future power demands
The companies stated that the initiative aligns with broader efforts to accelerate the deployment of critical technologies in response to increasing power demands from sectors such as artificial intelligence, industrial electrification and defence.
Kris Shepherd, President of Electrical Power for GE Aerospace, said the collaboration brings together complementary expertise to support the development of smaller, more efficient and reliable high-voltage systems.
Wolfspeed Chief Executive Officer Robert Feurle noted that increasing demand from AI, electrification and defence applications is creating a need for advanced high-voltage power technologies capable of delivering improved efficiency and reduced deployment times.
Recent silicon carbide developments
GE Aerospace recently qualified high-voltage power units for United States military ground vehicles and demonstrated its fourth generation of silicon carbide power MOSFET technology at its Research Center in Niskayuna, New York. The company said these developments improve switching speed, efficiency and durability.
Wolfspeed, which manufactures silicon carbide devices using 200 mm wafer technology, recently introduced what it describes as the world’s first commercially available 10 kV silicon carbide MOSFET, providing a production-ready solution for industrial, aerospace and defence applications.
Expanding electrification opportunities
The agreement reflects growing interest in silicon carbide technology as industries seek more efficient methods of power conversion and distribution. The companies believe that establishing common standards and increasing supply chain capacity will support broader adoption of high-voltage electrification technologies across multiple sectors.
SOURCE AND IMAGE: GE AEROSPACE

